In addition, by utilizing a 2-nm-Al0.3Ga0.7As capping layer on the InAs quantum dots, a transverse-electric (TE)-field-enhanced multicolor quantum dot infrared photodetector (QDIP) has been achieved.

• 另外，藉由在砷化铟量子点上盖上2奈米的铝砷化镓，已经完成一个增强横向电波的多波段量子点红外线侦测器。