Importing this new architecture can form latch-phenomenon to keep working point into two stable states robustly, so this design can improve noise-defense ability of MOS.

• 当闸极电压操作时间较长时，所产生电流工作点因杂讯飘移过大的问题，利用所提出元件的架构来产生闩锁现象将工作点拑位在两个稳态点，来提高金属氧化半导体抗杂讯的能力。