However, the surface stress caused by lattice mismatch between the InAs and (In)GaAs overgrown layers often results in defects that are detrimental for optical devices.

• 然而研究中却发现因为砷化镓间格层与砷化铟量子点之间存在著极大的不匹配性，使量子点活性层中容易形成孔洞状缺陷。