However, the basic parameters such as band alignment are still not so clear due to the complexity of the band shifting and splitting as a result of strain effect between Si/SiGe lattice mismatch.

• 然而，对于有些基本的材料特性还不是很清楚，像是应变所带来的复杂能带结构改变，使得定义能带接面变的相当困难。