H- passivating Si surface has been achieved by using chemical method, and the nanometer-scale line structure with 5Onm on Si surface has been made by using STM selective oxidation and chemical etch.

• 利用化学方法实现氢钝化Si表面，研制确定了STM选择局域氧化的制备工艺，制备了5onm的氧化硅线条结构，利用化学腐蚀将此图形转移到硅衬底上。