GaN epitaxial layers and InGaN/GaN multiquantum well (MQW) blue light emitting diodes (LEDs) were prepared on both patterned sapphire substrates (PSS) and conventional sapphire substrates.

• 摘要以一条状蓝宝石基板(PSS)与一传统蓝宝石基板两种不同基板来成长氮化镓磊晶层与氮化铟镓/氮化镓多层量子井(MQW)蓝光发光二极体。