From scanning electron microscopy (SEM) micrographs of GaN epitaxial layers on PSS, it was found that lateral growth indeed occurred and the lateral to vertical growth rate ratio was around 2.

• 扫描式电子显微镜(SEM)条状蓝宝石基板氮化镓磊晶层的显微相片，可以发现横向成长确实有产生，而且横向对纵向的成长速率比约为2。