For the materials used in common, the n-type silicon with a doping concentration is 1015/cm3, when the distance is less than 450nm, the error caused by metal formula is larger than 10%.

• 对于微机械常用的Si材料，掺杂浓度为1015/cm3，当微结构间距离小于450nm时，利用金属模型计算静电作用力的误差将大于10%25。