Fluorinated amorphous carbon(a-C:F) films were deposited using C_4F_8 and CH_4 as precursor gases by electron cyclotron resonance chemical vapor deposition (ECR_CVD).

• 采用电子回旋共振等离子体化学气相淀积(ECR-CVD)法；以C4F8和CH4为源气体制备了非晶氟化碳(a-C:F)薄膜.