Ferroelectric Bi_(3.25)M_(0.75)Ti_3O_(12) ((M=Nd,Al,In)) thin films have been prepared on LaNiO3 (LNO)/Si and quartz by chemical solution deposition (CSD), respectively.

• 采用化学溶液沉积法分别在LaNiO3(LNO)/Si和石英衬底上制备了Bi_(3.；25)M_(0