Enhanced growth of low-resistivity self-aligned CoSi2, C54-TiSi2, and NiSi on epitaxial Si0.7Ge0.3 has been achieved with an interposing amorphous Si (a-Si) layer.

• 另一方面，在金属与矽锗合金之间夹一层适当厚度的非晶质矽当作反应消耗层亦可生成优质的低电阻率金属矽化物。