EL devices were fabricated based on 20-nm-thickness Ge-SiO. , films andtheir structures are Au/Ge-Si02/p-Si and Au/Ge-Si02/n-Si.

• 在20nm厚的Ge-SiO_2薄膜基础上制备出电致发光器件，结构分别为Au/Ge-SiO_2/p-Si、Au/Ge-SiO_2/n-Si。