During switch phase, said RITD can provide high current density to bring low slew rate of a conventional MOS up, thus the high speed switch is reached.

• 在切换过程当中共振带间穿遂二极体提供高电流密度，能减低迴旋率导致金属氧化半导体切换速度较慢的因素，提供较高速度切换的金属氧化半导体。