Chemical EPD observation and X-ray diffraction rocking curves show that there is a higher dislocation density on the wafers cut from the end of the crystal ingots. The generation of those defects is also discussed.
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释义
通过化学蚀的EPD观测和X射线衍射测试结果,分析了晶体中后部位错密度增高及其产生的原因。
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