Chapter 5 is related to 2D device physics, we discuss FIBL(fringing-induced barrier lowering) in subthreshold region with various gate dielectrics, sidewalls, and drain voltages.

• 第五章探讨二维的元件物理特性，讨论不同闸极介电层、边墙材料、和汲极偏压下，次临界区域的边缘引发位障下降现象。