By optimizing the MBE technique and conditions experimentally, we grew the improved GaN film on vicinal sapphire (0001) substrates by radio frequency plasma-assisted molecular beam epitaxy.

• 在实验优化MBE工艺条件的基础上，采用蓝宝石（0001）邻晶面衬底制备出了具有较高质量的GaN薄膜。