Based on the analysis of quasi-classical model and quantam model,a new empirical method is presented to extract the oxide thickness from measured C-V curves in accumulation region of MOS capacitors.

• 在分析半经典模型和量子模型的基础上 ；得到包括量子效应和多晶硅耗尽效应的栅氧厚度提取模型 .