Based on Bohr Sommerfeld quantized condition,the transcendental equation that the energy level E of 2DEG in silicon MOS surface region with parabolic well satisfied is founded,and then the analytic expression for energy level is obtained.

• 从玻尔 -索末菲量子化条件出发 ,以抛物线势阱为模型 ,建立了硅 MOS结构表面反型层中二维电子气能级 E满足的超越方程 ,并从该方程得到了能级 E的解析表达式。