An analytical model which could be used to study the 6H-SiC PMOS device behavior in a wide temperature range has been developed.
英
美
释义
提出了一个在较宽温度范围内能精确描述6H-SiC PMOS性能的器件模型。
把海词放在桌面上,查词最方便
触屏版
|
电脑版
©2003 - 2024 海词词典(Dict.cn)
立即下载