Although the AlN layer was not fully relaxed as confirmed by the RHEED in-situ d-spacing measurement, it largely decreased the mismatch between the ZnO and the sapphire substrate.

• 由于氮气气氛下射频处理后，会在衬底表面形成一个薄的AlN层，很大程度上减小氧化锌和衬底之间的晶格失配率，从而改善了氧化锌的结晶质量。