Also,the added schottky diode can be easily realized by schottky contact in the drain of the NMOSFET,which does not add chip area.

• 且该电路结构中肖特基二级管可在NMOSFET漏极直接制作肖特基金半接触来方便地实现，工艺简明可行又无须增加芯片面积.