A technique is presented for the vapour phase epitaxy of GaxIn1-xAs in the system of AsCl3/Ga/In/H2 using a Ga/In alloy sources it is characteristic of excellent reproducibility, homogeneity and ease-to-obtain GaxIn1-xAs layers with high purity.

• 本文描述了一种汽相外延Ga_xIn_(1-x)As的技术:在AsCl_3/Ga/In/H_2体系中,采用Ga/In合金源汽相生长Ga_xIn_1As。