A super-self-aligned (SSA) structure and manufacturing process uses a single photomasking layer to define critical features and dimensions of a trench-gated vertical power DMOSFET.

• 一种新颖的超自对准(SSA)结构和制造方法，利用单光掩模层以限定沟栅垂直功率DMOSFET的主要特征和尺寸。