A polysilicon film has been successfully deposited on a quartz substrate with thereaction of SiH_4 decomposition induced by a CW CO_2 laser. Its Raman shift indicatesthat the crystallite size increases when the inducing reaction lasts.
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释义
用CWCO_2激光诱发SiH_4反应;在石英基片上淀积多晶硅膜;它的Raman谱表明;激光诱发反应时间越长;结晶度越高.
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