A p-buried GaAs MESFET (PB-GaAs MESFET) has been fabricated by means of im-planting Be into semi-insulating GaAs substrates to form a p-type buried layer under the chan-nel active layer.

• 本文采用在半绝缘GaAs衬底中离子注入Be；于沟道有源层下引入P型埋层技术；制成P埋层GaAs MESPET(PB-GaAs MESFET).