A VDMOS FET structure with reduced Miller capacitance and reverse recovery charge is presented, in which Schottky contact and separated polysilicon gate are used.

• 提出了在VDMOSFET中减小密勒电容和反向恢复电荷的一种新结构,该结构结合了肖特基接触和分段多晶硅栅的方法。